An Adaptive Body-Biased Low-Leakage SRAM Cache

نویسندگان

  • Nimay Shah
  • Rupak Samanta
  • Sunil Khatri
چکیده

In this project, we present an adaptive body biasing scheme for standby leakage reduction in the cache memories. During standby, the memory cells are in reverse body bias mode while during active mode a selected portion of the memory cells are driven to zero body bias. The main advantage of this scheme is zero delay penalty when compared to conventional design because of the fact that the cells are at zero body bias when accessed. The transition latency i.e. the delay to wake up the selected memory from reverse body bias to the zero body bias, is minimized using pipeline for the address decoder and the data path. We also present a technique for driver down-sizing when we have room to increase the memory wake up time without increasing the overhead on the pipeline. Experimental result indicates on an average a reduction of 28% of leakage power as compared to the conventional cache.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

26.5 PVT-Aware Leakage Reduction for On-Die Caches with Improved Read Stability

Leakage control during circuit operation is more challenging than standby mode control due to the short time to deactivate blocks, large overhead energy and run-time leakage variations. This paper proposes circuit techniques that address these challenges to reduce run-time leakage in on-die SRAM caches. A source-biased gated-ground SRAM is proposed; an efficient way to utilize this technique un...

متن کامل

Leakage Power Reduction in Deep Sub Micron Sram Design - a Review

Present day electronic industry faces the major problem of standby leakage current, as the processor speed increases, there is requirement of high speed cache memory. SRAM being mainly used for cache memory design, several low power techniques are being used for SRAM cell design. Full CMOS 6T SRAM cell is the most preferred choice for digital circuits. This paper reviews various leakage power t...

متن کامل

Adaptive Mode-Control: A Low-Leakage, Power-Efficient Cache Design

With the advent of deep sub-micron circuit technology, the ratio of static-to-dynamic power in on-chip memories has become an increasingly important issue. At the circuit level, designers propose low-leakage SRAM operation modes (i.e., sleep mode or standby mode) and at architecture level, there are increasing interests in how to efficiently integrate such features into the design. In this pape...

متن کامل

Low Power and Improved Read Stability Cache Design in 45nm Technology

–Cache is fastest memory which is played vital role in the present trend.Cache is achieved by SRAM. The scaling of CMOS technology has significant impact on SRAM cell -random fluctuation of electrical characteristics and substantial leakage current. In this paper we proposed dynamic column based power supply 8T SRAM cell to improve the read stability and low leakage. In this paper we compare th...

متن کامل

Analysis of Leakage Power Reduction in 6T SRAM Cell

On chip cache memories contributes a large fraction to the total power consumption of microprocessor. As technology scales down into d e e p -submicron, leakage power is becoming a dominant source of power consumption. As cache memory is an array structure leakage reduction in just one memory cell can on the whole reduce a large amount of leakage power. In this thesis leakage power of conventio...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2006